Quick Detail:
4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
Description:
The K4M513233C is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high performance memory system applications
Applications:
• 3.0V & 3.3V power supply.
• LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs.
-. CAS latency (1, 2 & 3).
-. Burst length (1, 2, 4, 8 & Full page).
-. Burst type (Sequential & Interleave).
• EMRS cycle with address key programs.
• All inputs are sampled at the positive going edge of the system
clock.
• Burst read single-bit write operation.
• Special Function Support.
-. PASR (Partial Array Self Refresh).
-. Internal TCSR (Temperature Compensated Self Refresh)
• DQM for masking.
• Auto refresh.
• 64ms refresh period (8K cycle).
• Commercial Temperature Operation (-25°C ~ 70°C).
• Extended Temperature Operation (-25°C ~ 85°C).
• 90Balls FBGA
Specifications:
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part no.
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K4M513233C-DN75
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Manufacturer
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SAMSUNG
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supply ability
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1920
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datecode
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07+
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package
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BGA
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remark
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new and original stock
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Competitive Advantage:
Mega Source Electronics stocks components ready to ship. Hard to find, obsolete and highly allocated integrated circuits and semiconductors are all can be found by us.
Mega Source Electronics has established a well-developed logistics system and global logistics network, which can guarantee our service very quick, convenient and efficient.
Product Tags:
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Flash Memory IC Chip K4M513233C-DN75 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA Images
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