IS41LV16100B-60KL - Integrated Silicon Solution, Inc - 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
Quick Detail:
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
Description:
The ISSI IS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word.
These features make the IS41LV16100B ideally suited for high-bandwidth graphics, digital signal processing, highperformance computing systems, and peripheral applications.
The IS41LV16100B is packaged in a 42-pin 400-mil SOJ and 400-mil 50- (44-) pin TSOP (Type II).
Applications:
• TTL compatible inputs and outputs; tristate I/O
• Refresh Interval:
— Auto refresh Mode: 1,024 cycles /16 ms
— RAS-Only, CAS-before-RAS (CBR), and Hidden
• JEDEC standard pinout
• Single power supply: 3.3V ± 10%
• Byte Write and Byte Read operation via two CAS
• Industrial Temperature Range: -40oC to +85oC
• Lead-free available
Specifications:
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Datasheets
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IS41LV16100B
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Standard Package
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16
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Category
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Integrated Circuits (ICs)
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Family
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Memory
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Series
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-
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Packaging
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Tube
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Format - Memory
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RAM
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Memory Type
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DRAM - EDO
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Memory Size
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16M (1M x 16)
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Speed
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60ns
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Interface
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Parallel
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Voltage - Supply
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3 V ~ 3.6 V
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Operating Temperature
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0°C ~ 70°C
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Package / Case
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42-SOJ
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Supplier Device Package
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42-SOJ
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Competitive Advantage:
Warranty :180 days !
Free shipping: Order over $1000 win a free shipment fee
(goods weight below 3Kg) ,during 20130901-20130930 .
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Product Tags:
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IS41LV16100B-60KL- 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE Images
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